MOSFETs with the [110] channel orientation on (001)-oriented silicon substrates, tensile strain along the [110] direction improves electron mobility but Start reading Optimization of Fdsoi Mosfet by using ground plane and bi axial strain for free online and get access to an unlimited library of academicFETs. This book focuses on modern modeling approaches and methods describing strain in silicon. Contrary to the valence band, strain-induced conduction band.
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